FQA170N06
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN
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Buying Options
Total Price: USD $6.37
Unit Price: USD $6.3712
≥1 USD $6.3712
Inventory: 52
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5.6MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 170A
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 85 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Rise Time 700 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 430 ns
Turn-Off Delay Time 260 ns
Continuous Drain Current (ID) 170A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 680A
Avalanche Energy Rating (Eas) 990 mJ
Dimensions
Height 18.9mm
Length 15.8mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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