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FQA13N50CF

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 500V N-Ch C-FET (FRFET)
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.0507
≥1 USD $1.0507
≥10 USD $0.8626
≥100 USD $0.836
≥500 USD $0.80845
≥1000 USD $0.78185
Inventory: 1289
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series FRFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 480MOhm
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 218W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 218W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 860 mJ

Dimensions

Height 20.1mm
Length 15.8mm
Width 5mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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