FQA12P20
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 200V 12.6A TO-3P
PDF
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 7699
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Rds On Max 470 mΩ
Drain to Source Resistance 470mOhm
Input Capacitance 1.2nF
Drain to Source Breakdown Voltage -200V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 12.6A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Rise Time 195ns
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 470mOhm @ 6.3A, 10V
FET Type P-Channel
Power Dissipation 150W
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Current Rating -12.6A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -200V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series QFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-3P
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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