Drain to Source Breakdown Voltage -20V
Drain-source On Resistance-Max 0.075Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -3.7A
Turn-Off Delay Time 124 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 75m Ω @ 2A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 5.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.7W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ