FDT86256
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 1.2A SOT-223-4
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.31825
≥1 USD $0.31825
≥10 USD $0.26125
≥100 USD $0.25365
≥500 USD $0.2451
≥1000 USD $0.23655
Inventory: 21003
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 2.3W Ta 10W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 2.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 845m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 73pF @ 75V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta 3A Tc
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Rise Time 1.7 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 4.8 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.845Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 2A
Dimensions
Height 1.7mm
Length 6.7mm
Width 3.7mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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