Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature FAST SWITCHING
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 32 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.023Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 635pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 23m Ω @ 8.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta