Drive Voltage (Max Rds On,Min Rds On) 4.5V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 40V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 4766pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 11A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ