Avalanche Energy Rating (Eas) 66 mJ
Pulsed Drain Current-Max (IDM) 84A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.025Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 30.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 21A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 26W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ