Drain to Source Resistance 2.2mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Input Capacitance 24.74nF
Pulsed Drain Current-Max (IDM) 500A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 277A
Turn-Off Delay Time 435 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 40V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 306W
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)