FDP7N50
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 7A TO-220
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Buying Options
Total Price: USD $1.16
Unit Price: USD $1.16185
≥1 USD $1.16185
≥10 USD $0.95285
≥100 USD $0.9234
≥500 USD $0.89395
≥1000 USD $0.86355
Inventory: 1174
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V
Rise Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.9Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 270 mJ
Dimensions
Height 16.51mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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