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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220; UniFET?
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Buying Options
Total Price: USD $2.4
Unit Price: USD $2.4024
≥1 USD $2.4024
≥10 USD $1.929136
≥100 USD $1.587256
≥500 USD $1.343038
≥1000 USD $1.139547
≥3000 USD $1.082576
Inventory: 913
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.83mm
Length 10.67mm
Height 9.4mm

Technical

Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Threshold Voltage 5V
Continuous Drain Current (ID) 6.1A
Turn-Off Delay Time 125 ns
Fall Time (Typ) 170 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 215 ns
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Input Capacitance (Ciss) (Max) @ Vds 3380pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 41m Ω @ 30.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Power Dissipation 417W
Operating Mode ENHANCEMENT MODE
Current 61A
Element Configuration Single
Power Dissipation-Max 417W Tc
Voltage 200V
Number of Elements 1
Current Rating 61A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Additional Feature FAST SWITCHING
Resistance 41MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series UniFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 7 Weeks

Alternative Model

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