FDP5500
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO-220AB
PDF
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Buying Options
Total Price: USD $1.99
Unit Price: USD $1.9888
≥1 USD $1.9888
Inventory: 1132
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 860 mJ
DS Breakdown Voltage-Min 55V
Drain-source On Resistance-Max 0.007Ohm
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 80A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 269nC @ 20V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3565pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 80A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 375W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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