Avalanche Energy Rating (Eas) 860 mJ
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.066Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 39A
Turn-Off Delay Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 66m Ω @ 19.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 251W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature FAST SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ