Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 61A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Ta 61A Tc
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 16m Ω @ 61A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ