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FDP22N50N

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 22A TO-220
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Buying Options
Total Price: USD $3.24
Unit Price: USD $3.2384
≥1 USD $3.2384
≥10 USD $2.568016
≥100 USD $2.201232
≥500 USD $1.956645
≥1000 USD $1.67537
≥3000 USD $1.577541
Inventory: 245
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Width 4.5mm
Length 9.9mm
Height 9.2mm

Technical

Pulsed Drain Current-Max (IDM) 88A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 48 ns
Fall Time (Typ) 35 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 50 ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 220m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 22 ns
Power Dissipation 312.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 312.5W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 185mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series UniFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks

Alternative Model

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