FDP19N40
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 19A TO-220
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Buying Options
Total Price: USD $6.59
Unit Price: USD $6.5949
≥1 USD $6.5949
≥10 USD $5.4112
≥100 USD $5.2421
≥500 USD $5.073
≥1000 USD $4.9039
Inventory: 1253
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 240MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 215W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 215W
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2115pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 19A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 76A
Avalanche Energy Rating (Eas) 542 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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