Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ
Pulsed Drain Current-Max (IDM) 296A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 74A
Turn-Off Delay Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 5605pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 12m Ω @ 74A, 10V
Transistor Application SWITCHING