Avalanche Energy Rating (Eas) 588 mJ
DS Breakdown Voltage-Min 150V
Pulsed Drain Current-Max (IDM) 522A
Drain-source On Resistance-Max 0.0075Ohm
Drain Current-Max (Abs) (ID) 120A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 333W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ