FDN338P_G
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
INTEGRATED CIRCUIT
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Technical Details
Technical
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 451pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 115m Ω @ 1.6A, 4.5V
FET Type P-Channel
Power Dissipation-Max 500mW Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Series PowerTrench?
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Alternative Model
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