Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.7m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2640pF @ 40V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Element Configuration Single
Power Dissipation-Max 2.5W Ta 69W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 60 mJ
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 80V
Drain Current-Max (Abs) (ID) 22A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.5A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V