Drain to Source Breakdown Voltage 80V
Drain Current-Max (Abs) (ID) 50A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 40V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.8m Ω @ 17A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 96W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ