Pulsed Drain Current-Max (IDM) 30A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.056Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.8A
Turn-Off Delay Time 10.2 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta 16.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 56m Ω @ 4.8A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 31W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ