Turn On Time-Max (ton) 49 ns
Turn Off Time-Max (toff) 52 ns
Feedback Cap-Max (Crss) 40 pF
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 337 mJ
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0042Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Ta 124A Tc
Input Capacitance (Ciss) (Max) @ Vds 4125pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 44A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 125W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ