Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.025Ohm
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 1305pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 69W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ