FDMS86101E
RoHS
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Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
FET 100V 8.0 MOHM PQFN56
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12.4A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
FET Type N-Channel
Power Dissipation-Max 2.5W Ta 104W Tc
Technology MOSFET (Metal Oxide)
Part Status Active
Series PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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