Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 60A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14.5A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14.5A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 3135pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 14.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta 125W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Dual Cool?, PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ