Avalanche Energy Rating (Eas) 1536 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 400A
Drain-source On Resistance-Max 0.00065Ohm
Drain Current-Max (Abs) (ID) 55A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 22610pF @ 15V
Vgs(th) (Max) @ Id 3V @ 750μA
Rds On (Max) @ Id, Vgs 0.65m Ω @ 55A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 156W Tc
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ