Avalanche Energy Rating (Eas) 93 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0025Ohm
Drain Current-Max (Abs) (ID) 42A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta 42A Tc
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 2.5m Ω @ 26A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 65W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ