Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0095Ohm
Drain Current-Max (Abs) (ID) 47A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13.2A Ta 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 9.5m Ω @ 13.2A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 27W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ