Avalanche Energy Rating (Eas) 54 mJ
Pulsed Drain Current-Max (IDM) 70A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0055Ohm
Drain Current-Max (Abs) (ID) 26A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17.5A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17.5A Ta 26A Tc
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5.5m Ω @ 17.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 41W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ