Avalanche Energy Rating (Eas) 72 mJ
Pulsed Drain Current-Max (IDM) 90A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta 28A Tc
Input Capacitance (Ciss) (Max) @ Vds 2960pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 19A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 48W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ