Avalanche Energy Rating (Eas) 32 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0075Ohm
Drain Current-Max (Abs) (ID) 49A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 13V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 15A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 27W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ