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FDMS3016DC

ON Semiconductor
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V N-Channel Dual Cool PwrTrench
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Inventory: 7428
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Dual Cool?, PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.3W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 72 mJ

Dimensions

Height 1.05mm
Length 5.1mm
Width 5.85mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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