Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0026Ohm
Drain Current-Max (Abs) (ID) 49A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Ta
Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 15V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 2.6m Ω @ 28A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.3W Ta 78W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Dual Cool?, PowerTrench?, SyncFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ