Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.003Ohm
Drain Current-Max (Abs) (ID) 22.1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22.1A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 7560pF @ 30V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 3m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 104W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ