DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.0024Ohm
Drain Current-Max (Abs) (ID) 26A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 49A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta 49A Tc
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 15V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 26A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 59W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series PowerTrench?, SyncFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ