FDME820NZT
RoHS 
RoHS compliant
RoHS compliantPackage 6-PowerUFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-channel PowerTrench MOSFET
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Buying Options
Total Price: USD $0.34
Unit Price: USD $0.3432
≥1 USD $0.3432
Inventory: 1174
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerUFDFN
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 2.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 20V
Dimensions
Height 500μm
Length 1.6mm
Width 1.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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