Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 80V
Drain-source On Resistance-Max 0.0065Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 48A
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 48A Tc
Input Capacitance (Ciss) (Max) @ Vds 3885pF @ 40V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 14A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 54W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ