Avalanche Energy Rating (Eas) 72 mJ
Pulsed Drain Current-Max (IDM) 30A
Drain to Source Breakdown Voltage 80V
Drain-source On Resistance-Max 0.023Ohm
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 965pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 41W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium (Ni/Pd)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ