Avalanche Energy Rating (Eas) 6 mJ
Pulsed Drain Current-Max (IDM) 2A
Drain to Source Breakdown Voltage -150V
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 1.8A
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta 1.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 16W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ