Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage -150V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 2.7A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 2.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 40W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ