Avalanche Energy Rating (Eas) 37 mJ
Drain-source On Resistance-Max 0.09Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.4A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 525pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250mA
Rds On (Max) @ Id, Vgs 90m Ω @ 3.4A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 36W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ