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FDMC86116LZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.49509
≥1 USD $0.49509
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 1142
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 180mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 19W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 103m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 1.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.4 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.5A
Drain to Source Breakdown Voltage 100V

Dimensions

Height 750μm
Length 3.3mm
Width 3.3mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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