Avalanche Energy Rating (Eas) 29 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.005Ohm
Drain Current-Max (Abs) (ID) 16.5A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16.5A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1228pF @ 13V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 17A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 26W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ