Avalanche Energy Rating (Eas) 294 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 27A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 5795pF @ 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 27A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 54W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ