Avalanche Energy Rating (Eas) 72 mJ
Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 44A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 12A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 27W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ