Avalanche Energy Rating (Eas) 66 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0044Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 3165pF @ 15V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 4.4m Ω @ 19A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 36W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series PowerTrench?, SyncFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ