Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -150V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 42W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ