Drain to Source Resistance 2.95mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 34 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)