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FDMC15N06

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET UltraFET 55V, 15A
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Buying Options
Total Price: USD $7.76
Unit Price: USD $7.76055
≥1 USD $7.76055
≥10 USD $6.36785
≥100 USD $6.16835
≥500 USD $5.9698
≥1000 USD $5.7703
Inventory: 1164
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 3.3mm
Length 3.3mm
Height 500μm

Technical

Avalanche Energy Rating (Eas) 36 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.09Ohm
Drain Current-Max (Abs) (ID) 2.4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 22.5 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 36.5 ns
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 900m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.5 ns
Case Connection DRAIN
Power Dissipation 35W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 35W Tc
Number of Elements 1
JESD-30 Code S-PDSO-N5
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e3
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 200mg
Number of Pins 8
Package / Case 8-PowerWDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks

Alternative Model

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