Avalanche Energy Rating (Eas) 36 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.09Ohm
Drain Current-Max (Abs) (ID) 2.4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 22.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 900m Ω @ 15A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 35W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ